Simon Li's 3D TCAD Simulation for Semiconductor Processes, Devices and PDF

By Simon Li

ISBN-10: 1461404800

ISBN-13: 9781461404804

ISBN-10: 1461404819

ISBN-13: 9781461404811

Technology computer-aided layout, or TCAD, is necessary to today’s semiconductor know-how and anyone operating during this must comprehend anything approximately TCAD. This publication is set tips to use software program to fabricate and try out almost semiconductor units in 3D. It brings to existence the subject of semiconductor machine physics, with a hands-on, educational technique that de-emphasizes summary physics and equations and emphasizes actual perform and vast illustrations. assurance encompasses a accomplished library of units, representing the state-of-the-art know-how, equivalent to SuperJunction LDMOS, GaN LED units, etc.

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Additional resources for 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

Sample text

If the original surface contains steps, slopes or holes, it becomes a little complicated. A process simulator usually produces a new top surface that is smoother than the original. A method of generating smooth deposit surface is due to SUPREM-IV. GS and it is described as follows. The process simulator scans the mesh points of the original surface. If it detects the adjacent mesh points form a flat line, a simple shift of original mesh point upwards is performed. If it detects a change of angle between adjacent points, it would form two vectors n1 and n2, as shown in Fig.

Such a model is also referred to as the hydrodynamic model and the most common derivation is that of Azoff [20, 21]. For simplicity, we only present the equations for hot electrons. The corresponding equations for hot holes are completely analogous. 1 Basic Equations 43 ! ~ ! 4) 5! 10 ! 5) In the above, o is the total energy of an electron and o0 ¼ 3kT=2 is the electron energy at equilibrium. S~is the electron energy flux and to is the energy relaxation time. The primary function of a TCAD device simulation program is to solve the above equations self-consistently for the electrostatic potential, V, the electron and hole concentrations, n and p, respectively, the electron and hole energy, Wn and Wp, respectively.

4 Inactive Impurities Some types of impurities are able to diffuse when paired with point-defects without being activated. Examples of this behavior include n-type dopants like phosphorous and antimony. Please note that the total concentration CT appears on both sides of the equation here. @CT !  ƒ!  ¼ r Á À JAI À JAV @t   CV ! CV n ƒ! JAV ¼ ÀDV CT à r ln CT à CV CV ni   CI ! CI n ƒ! 5 23 Neutral Impurities In TCAD process simulation, many charge neutral impurities are involved in the diffusion process.

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3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics by Simon Li

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