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The effect of radiative heat transfer is explicitly considered. A fixed temperature is imposed on the graphite susceptor and the temperatures of all the surfaces of the reactor are calculated solving the energy balance equation. 3. 1. Gas Phase and surface chemistry The kinetic mechanism used in the simulations is essentially similar to the one we described in [14], from which it differs only for the HCl desorption chemistry, which we investigated through quantum chemistry and discuss here in detail.

Phys. Rev. B 37 (1988), 785–789 [11] C. Y. B. J. Frisch, Using redundant internal coordinates to optimize equilibrium geometries and transition states. J. Comp. Chem. 17 (1996) 49–56. A. H. Weinberg, Theoretical foundations of dynamic Monte Carlo simulations. J. Chem. Phys. 95 (1991) 1090–1096. [13] G. Valente, C. Cavallotti, M. Masi, S. Carra, Reduced order model for the CVD of epitaxial silicon from silane and chlorosilanes. J. Crystal Growth 230 (2001) 247–257. [14] C. Cavallotti, V. Gupta, C.

The KMC simulation requires as input the adsorption fluxes of SiCl2 and SiHCl3 from the gas phase, which are determined through the solution of the reactor scale model. 1, the hydrogen surface dynamics is not explicitly considered, since in the high temperature conditions at which the growth of Si is performed it is likely that its concentration on the surface is at the equilibrium. This is confirmed by the reactor scale simulations. On the other side chlorine is present on the surface in a significant concentration.

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Album Panini Calciatori Mondiali Messico

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